GaInAs/InP planar buried heterostructure (PBH) lasers with semi-insulating blocking layers were grown in an ‘all’ atmospheric OMVPE system. These layers had current thresholds as low as 35 mA and differential quantum efficiencies of ≃16% at a wavelength of 1.64 μm. The maximum power output was 80 mW pulsed and 8mWCW.
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Miller et al. (1986) studied this question.
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