Sputtered SiO2 films were applied as an insulator in all-refractory Josephson circuits. The sputtered SiO2 exhibited excellent insulating characteristics with respect to infrared absorption, breakdown voltage, and step coverage. The sputtered SiO2 was employed in the actual fabrication of Nb/AlOx/Nb Josephson circuits, and no deterioration in the junction quality or the critical current density was observed. An 8Kbit memory cell array was fabricated, and perfect chips with no failures were obtained. In these chips, the integrity of the insulation and continuity was verified for four-level Nb electrodes. This indicates the availability of sputtered SiO2 in all-refractory Josephson integrated circuits.
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Hoko et al. (1987) studied this question.
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