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June 7, 1993Applied Physics Letters

Light-induced annealing of metastable defects in hydrogenated amorphous silicon

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Authors

CGCarlos F. O. GraeffDepartment of Physics, Mathematics and InformaticsRBR. BuhleierCentre National de la Recherche ScientifiqueMSM. StutzmannSchott (Germany)

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Graeff et al. (1993) studied this question.

synapsesocial.com/papers/6a71a79d5d37378ac1debf4fhttps://doi.org/10.1063/1.109170
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Fast metastable defect-creation in amorphous silicon by femtosecond light pulses1991 · 49 citations
  2. 2Saturation of the light-induced defect density in hydrogenated amorphous silicon1989 · 132 citations
  3. 3Influence of illumination during annealing of quenched defects in undoped amorphous silicon1992 · 43 citations
  4. 4The connection between dispersive hydrogen motion and the kinetics of light-induced defects in hydrogenated amorphous silicon1989 · 26 citations
  5. 5Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study1985 · 1,202 citations