Microscopic Mechanism for Annealing of Photocreated Dangling Bonds in a-Si:H

A microscopic mechanism for annealing of photocreated dangling bonds in a-Si:H is presented taking into account hydrogen plays an important role in annealing of dangling bonds. This model can account for the experimental fact that photocreated dangling bonds as well as thermally created dangling bonds are annealed at relatively low temperatures such as 100–150°C in a-Si:H.