An electro-optic reflection modulator operated at incidence normal to the surface is presented attaining a switching contrast of 87:1 up to Gbit/s bit rates. The underlying mechanism is electroabsorption in the multilayered AlGaAs device. Operating the device for photodetection, we achieve a responsivity of about 1 A/W.
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Prank et al. (1989) studied this question.
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