This paper reports solutions to the issues of profile control, microloading effect and suppression of the sidewall roughness of submicrometer trenches by modifying the regular conditions of the Bosch process that is often employed in the inductively coupled plasma (ICP) deep reactive ion etching (DRIE) system. Additionally, under the modified processing conditions, a high efficient antireflection structure can be fabricated.
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Chang et al. (2005) studied this question.