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October 1, 1988IEEE Electron Device Letters

High-speed 1.3 mu m GaInAs detectors fabricated on GaAs substrates

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Authors

DRD.L. RogersIBM (United States)JWJ. M. WoodallUniversity of California, DavisGPG. D. PettitNational Taipei University of Technology

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Rogers et al. (1988) studied this question.

synapsesocial.com/papers/6a71c9fba528af2d65c433f7https://doi.org/10.1109/55.17829
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