Young’s modulus of VO2 thin films as a function of temperature including insulator-to-metal transition regime

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Young’s modulus of VO2 thin films has been measured for the first time through the material’s insulator-to-metal transition. The resonant frequency of silicon VO2 coated cantilevers was measured in the temperature range 30–90°C. It has been found that during the semiconductor to metallic transition of VO2 thin films, which occurs at a temperature of 68°C, Young’s modulus changes most dramatically with temperature, abruptly reversing its declining trend with increasing temperature. The film is stiffened through the transition and, as the temperature is further raised, the declining trend is reasserted at a similar rate.