On the determination of the carrier concentration of GaAs1−xPx

The possibility is shown to determine the carrier concentration of GaAs1−xPx from a reverse biased metal–semiconductor contact without knowing the x-values. The comparison with RH-values emphasizes the exactness of the technique for the determination of the carrier concentration. The local resolution and the reproducibility of the measuring method can be characterized as rather good on the basis of detailed investigations. A routine application is promoted by the insignificant preparation of the sample.