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We investigate the dynamics of photoexcited carriers in silicon after interband excitation with optical femtosecond pulses by probing intraband transitions with time-delayed THz pulses. The experimental data at various temperatures are compared with numerical, self-consistent solutions of the intraband polarization and Maxwell’s equations. In addition, we deduce the carrier scattering rate from the comparison between experiment and theory.
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Zielbauer et al. (1996) studied this question.
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