Tangential signal sensitivity (TSS) of GaAs planar doped barrier (PDB) detector diodes as low as -55 dBm at 35 GHz has been achieved. In comparison with that of reported devices, this value is 6-dBm better, implying the diodes can detect much lower power hence widening the dynamic range of microwave/millimeter-wave power detectors.
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Hu et al. (2005) studied this question.
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