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May 15, 1973Applied Physics Letters

Ge-doped p-type epitaxial GaAs for microwave device application

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Authors

FRF.E. RosztoczyVarian Medical Systems (United States)JCJ. F. CaldwellJKJ. KinoshitaTokyo Institute of Technology

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Rosztoczy et al. (1973) studied this question.

synapsesocial.com/papers/6a720c9553da1ffdb507cccchttps://doi.org/10.1063/1.1654494
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