GaAs double-drift IMPATT devices were fabricated by liquid-phase epitaxial growth of n and p layers on an n+substrate. CW output power of 2.35 W with 16.3-percent efficiency at 8.9 GHz and pulse output power of 4.1 W with 20.7-percent efficiency at 10.56 GHz are reported.
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Omori et al. (1973) studied this question.
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