Self‐diffusion data are collected from the literature in an attempt to better understand the strong effects of carbon as a sintering aid in SiC. These data indicate that the presence of excess carbon, in addition to reducing the native SiO 2 layer of the SiC, probably enhances the rate‐controling bulk self‐diffusion rate of SiC by a factor of about 100.
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Rijswijk et al. (1990) studied this question.