Self‐Diffusion of Carbon‐14 in High‐Purity and N‐Doped α‐SiC Single Crystals

The self‐diffusion coefficients of 14 C in high‐purity, essentially intrinsic and N‐doped, n ‐type α‐SiC single crystals were measured at 2123 to 2453 K. The Si 14 C tracer was chemically bonded by a traveling solvent technique. The D c * in the doped crystals is smaller than that of the pure materials because of the decreased concentration of the charged donor‐type C vacancies in the presence of the donor N species.