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January 15, 1971Physical review. B, Solid state

Intrinsic Diffusion of Boron and Phosphorus in Silicon Free From Surface Effects

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RGR. N. GhoshtagoreNational Institute of Standards and Technology

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R. N. Ghoshtagore (1971) studied this question.

synapsesocial.com/papers/6a721b6e2163a0a01bc5effdhttps://doi.org/10.1103/physrevb.3.389
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Also Consider

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  1. 1Solid Solubility and Diffusion Coefficients of Boron in Silicon1969 · 178 citations
  2. 2Formation of Junction Structures by Solid-State Diffusion1958 · 62 citations
  3. 3Application of Multilayer Potential Distribution to Spreading Resistance Correction Factors1969 · 101 citations
  4. 4The Theory of Anomalous Diffusion in Solids Near Diffusant Saturation Concentrations: Example-Phosphorus in Silicon1970 · 9 citations
  5. 5Dislocation-Induced Deviation of Phosphorus-Diffusion Profiles in Silicon1966 · 19 citations