A simple rapid nondestructive method of evaluating defects in silicon crystals is developed. This method is basically an observation of photoluminescence (PL) pattern or PL topography. The correlation between the PL topograph and the defects are examined by preferential etching. Stacking faults and dislocations which are known to adversely affect many devices are found to be observed as dark spots in the PL topograph.
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Nakashima et al. (1978) studied this question.
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