New high cw power and high-efficiency operations of GaAs avalanche diodes operating in the normal mode are reported. An output power of 500 mW (cw) at 11.1 GHz with an efficiency over 11.5% was obtained from a zinc-diffused GaAs diode. The diode was mounted junction side adjacent to the heat sink in a coaxial pin-type microwave package (Micro State Type 8).
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Kim et al. (1969) studied this question.
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