Experimental results obtained with an Xband reflection amplifier using vapour-phase epitaxial GaAs p–n junctions biased into avalanche breakdown are presented. Single-side-band noise figures of 17dB, power gains in excess of 30dB, and a high dynamic range have been repeatedly measured. The noise figures obtained with a large number of these diodes are significantly lower than those reported for Si or Ge diodes.
No takes yet. Share an insight, caveat, or question.
Kuno et al. (1968) studied this question.
Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context: