A GaInAs metal/semiconductor/metal (MSM) photodetector with a dark current less than 1μA is described. An Fe-doped InP layer was introduced between the metal and the GalnAs absorbing layer to improve the Schottky barrier height. A breakdown voltage of 30 V was achieved. A DC quantum efficiency of 64% and an impulse response, 1/e fall time of 190 ps were measured for a 20μm × 100μm device. The layer structure of our device is very attractive for integration with high-performance GaInAs/InP FETs.
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Yang et al. (1989) studied this question.
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