Dielectric Constant of Silicon Dioxide Deposited by Atmospheric-Pressure Chemical Vapor Deposition Using Tetraethylorthosilicate and Ozone

This is the authors' abstract. We don't add key points for this paper.

The dielectric constant of tetraethylorthosilicate (TEOS)/O 3 chemical vapor deposited silicon dioxide ( TEOS/O 3 -NSG) ranges, within the extent of this work, from 4 to 6, depending on both the deposition conditions and the substrate material. Although their influences on the dielectric constant are complicated, changes in the dielectric constant can be described by a single variable: the amount of H 2 O-elated components in TEOS/O 3 -NSG. The relationship between the dielectric constant and the amount of H 2 O-related components is in accordance with the Clausius-Mossotti relationship. The dielectric constant also varies with measurement temperature in line with the Debye orientational polarization. A rough estimate of the concentration of permanent electric dipoles is close to the number of H 2 O molecules desorbed thermally per unit volume of TEOS/O 3 -NSG.