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A fully monolithically integrated photoreceiver composed of a metal-semiconductor-metal (MSM) photodetector, a transimpedance amplifier and three limiting amplifier stages for high-speed optical-fiber links is presented. The IC was fabricated using a 0.2-μm gatelength high-electron mobility transistor (HEMT) technology with a fTof 60 GHz. The 1.3-1.55-μm wavelength photoreceiver optoelectronic integrated circuit (OEIC) has a bandwidth of 16 GHz with a high-transimpedance gain of 14 k/spl Omega/. Eye diagrams were demonstrated at 20 Gb/s with a output voltage of 1 V/sub p-p/.
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Lao et al. (1998) studied this question.
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