Metal–insulator–metal capacitors using Y2O3 dielectric grown by pulsed-injection plasma enhanced metalorganic chemical vapor deposition

Yttrium oxide-based metal–insulator–metal (MIM) capacitors were investigated. The dielectric films were grown on Si/TiSi2/TiN substrates using a low thermal budget metalorganic chemical vapor deposition process (T⩽350 °C). Low-temperature (450 °C) or high-temperature (700 °C) postdeposition annealings were carried out in different atmospheres (O2 or argon). X-ray diffraction, x-ray photoelectron spectroscopy, and secondary ion mass spectrometry were used to determine the structural and microstructural changes in the films. The films were incorporated into simple MIM test structures. A significant capacitance value of the order of 2.2 fF/μm2, a low leakage current density (∼10−8 A cm−2 at ±10 V) and a high electrical breakdown field of 7–8 MV/cm were measured for capacitors prepared from as-deposited or low temperature (450 °C) annealed films. These results indicate that yttrium oxide is a very promising dielectric to be used in silicon integrated circuits applications.