Thermodynamics of the Formation of TiN from TiCl4 ‐  NH 3 ‐  H 2 on a Patterned Oxidized Silicon Substrate

A thermodynamic study of titanium nitride formation on a patterned oxidized silicon substate in the gaseous phase was carried out. Calculations were performed in the temperature range of 700–1300 K and in the total pressure range of 27–133 Pa. On a silicon oxide surface, TiN formation occurs according to a three‐step mechanism involving , formation as an intermediate compound. On a TiN surface, the deposition occurs in the same manner. On a silicon surface, titanium disilicide or silicon nitride are the only condensed phases obtained at equilibrium in the ‐rich and ‐rich cases, respectively. Because silicon diffusion is allowed through and not through , TiN can only grow on a surface. In spite of the fact that is not conductive, the formation of a thin covering layer is necessary for TiN growth. Calculations show that the best TiN yield is obtained with an ammonia‐rich gaseous phase at a deposition temperature of about 1100 K.