Demonstrates optical and electrical properties of GaN-based microLEDs, highlighting their potential for micro-displays.
We determined the optical and electrical characteristics of GaN-based, ultraviolet micro light emitting diodes (microLEDs). Such microLEDs are essential to next-generation high-resolution micro-displays. Square-shaped microLEDs of different sizes (side lengths: 5-50 μm) were designed. The peak emission wavelength of these devices shifted <; 0.15 nm during the current injection. The 50 μm device had a 3.8 times greater relative illumination intensity than did the 5 μm device, suggesting a degradation in quantum efficiency in small devices. Measurements of temperature-dependent reverse leakage current indicated (1) thermal activation from deep centers and (2) a high percentage of components with surface recombination current in the small devices.
No takes yet. Share an insight, caveat, or question.
Tsai et al. (2020) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: