A 225–265 GHz I-Q Receiver in 130-nm SiGe BiCMOS for FMCW Radar Applications

This letter reports a compact-size 225–265 GHz quadrature receiver (RX), consisting of a low-noise amplifier (LNA), a power divider (PD), two down-conversion fundamental mixers, and an IQ generator, in a 130-nm SiGe BiCMOS technology withfT/f~ₘₐₓof 300/500 GHz. The measured peak value of the down-conversion power gain is 20.6 dB at 240 GHz without IF amplification, and it achieves a 3-dB RF bandwidth of 40 GHz from 225 to 265 GHz. The measured minimum single-sideband (SSB) noise figure (NF) is 13.2 dB at 240 GHz and better than 14.2 dB along the 3-dB RF bandwidth. The amplitude and phase imbalances of the IF output signals were measured as less than 1.7 dB and 2°, respectively, over the frequency range of interest. The RX circuit draws a current of about 40.5 mA from a single-supply of 3.3 V. It occupies a total area of 0.42 mm2(0.97 mm×0.43 mm), and the effective area is about 0.14 mm2, excluding the pads and Marchand baluns placed for on- wafer probing.