Annealing of self-assembled InAs/GaAs quantum dots: A stabilizing effect of beryllium doping

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We investigated the effects of postgrowth thermal annealing on optical properties of beryllium-doped InAs quantum dot (QD) heterostructures grown by molecular beam epitaxy. Thermal annealing induced a blueshift of up to 200 meV in light emission from an undoped sample, while a sample having GaAs layer heavily doped with beryllium on top of the QD region exhibited a much smaller blueshift. This phenomenon is interpreted as due to suppression of annealing-induced In/Ga interdiffusion.