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September 18, 2025

Influence of growth temperature and post-growth annealing on optical emission from GaAsBi/AlGaAs double parabolic quantum well structures

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Authors

EDEvelina DudutienėAŠAistė ŠtaupienėAŠAivaras Špokas

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Overview

Investigates how growth temperature and post-growth annealing affect optical properties, indicating significant changes in photoluminescence intensity.

Key Points

  • A nearly fivefold increase in photoluminescence intensity was observed with elevated growth temperature.
  • Temperature-dependent photoluminescence measurements revealed a blueshift of 75 meV in the annealed structure.
  • Post-growth rapid thermal annealing at 650 °C reduced optical emission intensity, suggesting thermal treatment sensitivity.
  • High-temperature exposure reduced defect density, highlighting the importance of thermal management in quantum well fabrication.

Cite This Study

Dudutienė et al. (2025) studied this question.

synapsesocial.com/papers/68d463e931b076d99fa63330https://doi.org/10.1117/12.3064225
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