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December 4, 2025Advanced ScienceOpen Access

Unraveling Band‐Tail Effects on Temperature‐Dependent Emission in GaAsBi via Photoluminescence

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Authors

XCXiren ChenChinese Academy of SciencesLZLiangqing ZhuEast China Normal UniversityLWLijuan WangChangchun University of Technology

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Overview

Analysis reveals how photoluminescence impacts thermal sensitivity in GaAsBi, suggesting improvements for optoelectronic devices.

Key Points

  • Temperature-dependent emission improves with optimally managed photoluminescence effects on GaAsBi devices.
  • Key findings indicate that the temperature sensitivity of GaAsBi varies significantly with changes in Bi content.
  • The dual-spectroscopy approach effectively assesses the role of band-tail states in the thermal behavior of GaAsBi.
  • This research guides future designs for more stable optoelectronic devices by resolving temperature sensitivity issues.

Cite This Study

Chen et al. (2025) studied this question.

synapsesocial.com/papers/6930dc6bea1aef094cca1f6fhttps://doi.org/10.1002/advs.202516349
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