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August 1, 1976Applied Physics LettersOpen Access

Effect of gas-phase stoichiometry on the minority-carrier diffusion length in vapor-grown GaAs

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Authors

MEM. EttenbergInfrared Laboratories (United States)GOG.H. OlsenPrinceton UniversityCNC. J. NueseUniversity of Illinois Urbana-Champaign

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Ettenberg et al. (1976) studied this question.

synapsesocial.com/papers/6a72a7d5e5469ee92be28121https://doi.org/10.1063/1.89027
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