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June 1, 1980IEEE Transactions on Electron Devices

The use of GaAs(Ga, Al)As heterostructures for FET devices

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Authors

DBD. Boccon‐GibodSupélecJAJ. P. AndréOmmic (France)PBP. Baudet

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Boccon‐Gibod et al. (1980) studied this question.

synapsesocial.com/papers/6a72a7d835aa2c282ce35d58https://doi.org/10.1109/t-ed.1980.19997
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Also Consider

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  1. 1A study of high-speed normally off and normally on Al<sub>0.5</sub>Ga<sub>0.5</sub>As heterojunction gate GaAs FET's (HJFET)1978 · 50 citations
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  3. 3A new heterojunction gate GaAs FET1975 · 17 citations
  4. 4Novel microwave GaAs field-effect transistors1979 · 7 citations
  5. 5Simple method of measuring drift-mobility profiles in thin semiconductor films1976 · 71 citations