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October 11, 1984Electronics Letters

Improved 2DEG mobility in selectively doped GaAs/ N -AlGaAs grown by MOCVD using triethyl organometallic compounds

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Authors

NKNaoki KobayashiNippon Shokubai (Japan)TFTakashi FukuiHokkaido University of Science

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Kobayashi et al. (1984) studied this question.

synapsesocial.com/papers/6a72ae0efebe604dd70ab875https://doi.org/10.1049/el:19840602
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