Effect on GaN/Al0.17Ga0.83N and Al0.05Ga0.95N/Al0.17Ga0.83N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy

The effects of isoelectronic In-doping on the structural and optical properties of GaN/Al 0.17 Ga 0.83 N and Al 0.05 Ga 0.95 N/Al 0.17 Ga 0.83 N quantum wells (QWs) on GaN were investigated. QWs were grown by atmospheric pressure metalorganic vapor phase epitaxy with either H 2 or N 2 carrier gas. Without In-doping, QWs grown in N 2 carrier gas had highly superior crystalline and optical properties than those grown in H 2 carrier gas. X-ray diffraction and photoluminescence studies revealed that In-doping improves the crystalline and optical properties of QWs, irrespective of the carrier gas species used during growth. These improvements are more remarkable for In-doping into the well layers rather than into the barrier layers.