The three-terminal n+-i-δ(p+)-i-n+V-groove barrier transistor (VBT) has been successfully fabricated by molecular beam epitaxy (MBE). The base terminal is connected to the δ(p+), the thin p+layer, by depositing aluminum on the etched V-groove. The demonstrated device possesses high potential of ultra-high-frequency (fᵣ > 30-GHz), high-power, and low-noise capability due to carriers transporting by thermionic emission and being controlled by the base-emitter bias.
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Chang et al. (1985) studied this question.
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