Materials study demonstrates complete suppression of basal plane dislocation arrays in 4H-SiC crystals, indicating improved wafer quality via growth cell optimization.
To prevent arrays of basal plane dislocations (BPD) forming during grown 4H-SiC single crystals, the growth cell in physical vapor transport (PVT) growth was modified by adapting the temperature gradients, the seed attachment method and the seeding phase. The resulting reduction in stress was modeled numerically and the crystals were investigated by X-ray topography (XRT) and molten potassium hydroxide (KOH) etching. Due to these modifications, the formation of BPD arrays was completely suppressed.
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Steiner et al. (2023) studied this question.
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