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This research aims to explore the unique propagation mechanism of basal plane dislocations (BPDs) in 4H-SiC layers.

Propagation mechanism of non-step-flow direction BPDs into 4H-SiC epitaxial layers and their stacking fault expansion behavior

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This research aims to explore the unique propagation mechanism of basal plane dislocations (BPDs) in 4H-SiC layers.
Direct imaging techniques, including after carrier injection, were utilized.
Microstructural analysis was performed to assess stacking fault behavior.
Investigation focused on the interaction between BPDs and threading mixed dislocations.
The identified BPD has a Burgers vector of 13[2¯110] instead of the typical ±13[112¯0].
Propagation occurred via interaction with threading mixed dislocation, leading to spiral growth steps.
Multiplication of stacking faults was observed, affecting power device reliability.

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Randomized trial investigates BPD propagation mechanisms in 4H-SiC, indicating implications for device reliability.

Imhof et al. (2026) studied this question.

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