Formation Mechanism and Complex Faulting Behavior of a BPD Loop in 180 μm Thick 4H-SiC Epitaxial Layer

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Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1. 1Propagation mechanism of non-step-flow direction BPDs into 4H-SiC epitaxial layers and their stacking fault expansion behaviorOriginal Research · 2026
2. 2Formation of basal plane dislocations by stress near epilayer/substrate interface of large-diameter SiC wafers with thick epitaxial layers2024 · 4 citations
3. 3Release of basal plane dislocations from a helical threading mixed dislocation in 4H-SiCOriginal Research · 2026
4. 4Investigation of Defect Propagation in 4H-SiC: From Substrate to Epitaxial LayersOriginal Research · 2026 · 4 citations
5. 5Evaluation of Basal Plane Dislocation Behavior near Epilayer and Substrate Interface2024