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This research aims to understand the relationship between threading mixed dislocations and stacking faults in 4H-SiC.

April 3, 2026Scripta MaterialiaOpen Access

Release of basal plane dislocations from a helical threading mixed dislocation in 4H-SiC

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This research aims to understand the relationship between threading mixed dislocations and stacking faults in 4H-SiC.
Utilized X-ray topography to analyze dislocation structures before UV irradiation.
Conducted photoluminescence imaging to observe effects after exposure to UV light.
Characterized dislocation segments and their configurations based on observed data.
Identified a single Shockley-type stacking fault associated with a threading mixed dislocation.
Found distinct configurations of three threading mixed dislocation segments.
Discovered two basal-plane dislocation releases that may influence the helical structure.

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Research identifies threading mixed dislocation's role in stacking fault formation in 4H-SiC, suggesting implications for device reliability.

Ota et al. (2026) studied this question.

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Research identifies threading mixed dislocation's role in stacking fault formation in 4H-SiC, suggesting implications for device reliability.