Origin analysis of expanded stacking faults by applying forward current to 4H-SiC p–i–n diodes

Stacking faults expanded by the application of forward current to 4H-SiC p–i–n diodes were observed using a transmission electron microscope to investigate the expansion origin. It was experimentally confirmed that long-zonal-shaped stacking faults expanded from basal-plane dislocations converted into threading edge dislocations. In addition, stacking fault expansion clearly penetrated into the substrate to a greater depth than the dislocation conversion point. This downward expansion of stacking faults strongly depends on the degree of high-density minority carrier injection.