Atomic step resolution in scanning tunneling microscope imaging of H2SO4 covered Si(100) surfaces

Stable, high-resolution scanning tunneling microscopy imaging of Si surfaces in an electrochemical environment, under potentiostatic control, is demonstrated. Atomic scale structures such as monoatomic steps are resolved on H2SO4 covered Si(100) surfaces. In this environment, contamination and reoxidation are quantitatively inhibited, making this method applicable for imaging of technical Si surfaces.