A very high transconductance (260 mS/mm) has been achieved for the first time with an InGaAs/InP junction field-effect transistor. The transistor was fabricated using a chemical etching technique which allowed the fabrication of submicrometer gate (0.5 μm). Very low values of access resistance were obtained using a self-aligned technology.
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Raulin et al. (1987) studied this question.
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