Characterization of disordered bonds in Si-implanted Ga0.47In0.53As with laser Raman spectroscopy

Difference in degree of disorder introduced by ion implantation into In–As and Ga–As bonds in Ga0.47In0.53As was studied with laser Raman spectroscopy. The disorder is introduced more easily into the In–As bond than into the Ga–As one. The disorder is removed simultaneously from both bonds with annealing at a temperature higher than 600 °C.