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A new edge-emitting structure designed for fiber-optical communications, in which the active area is limited to the edge of the chip, is described. Significant improvements in the quantum efficiency compared to previous emitting structures are obtained. A power emission of 2 mW for one edge is obtained at a current of 250 mA (λ = 8000 Å).
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Kressel et al. (1975) studied this question.
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