The conductance of narrow (0.1-{μ}m) silicon inversion layers has been measured at low temperatures. A divergent, nonmetallic decrease of conductance is observed below 30 K, in excellent quantitative agreement with the combined theories of weak localization and interaction effects in their one-dimensional form, if one assumes parameters comparable to those observed in wide (two-dimensional) inversion layers. In this novel experimental system both localization and interaction effects are present and comparable in size.
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Skocpol et al. (1982) studied this question.
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