March 1, 1999IEEE Transactions on Electron Devices

Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (>250 V) 4H-SiC p/sup +/-n junction diodes. II. Dynamic breakdown properties

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Abstract

For Part I see ibid., vol.46, no.3, pp.478-84 (Mar. 1999). This paper outlines the dynamic reverse-breakdown characteristics of low-voltage (1 kV) pn junction and Schottky rectifiers, and bipolar gain devices (thyristors, ICBT's, etc.) remains to be investigated.

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Neudeck et al. (1999) studied this question.

synapsesocial.com/papers/6a73136f542cb04b60cd5c0d https://doi.org/10.1109/16.748866

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Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (>250 V) 4H-SiC p/sup +/-n junction diodes. II. Dynamic breakdown properties

Abstract

Discussion

Cite This Study

Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (>250 V) 4H-SiC p/sup +/-n junction diodes. II. Dynamic breakdown properties

Abstract

Discussion

Cite This Study

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