Silicon-doped gallium arsenide antimonide electroluminescent diodes emitting to 1.06 μm

We report efficient room-temperature emission to 1.06 μm from silicon-doped gallium arsenide antimonide electroluminescent diodes fabricated in GaAs1−xSbx layers grown on GaAs substrates in a single-step LPE growth from melts containing from 0.1 to 1.1 at.% Si. The spectral half-width of the emission is 42.5 nm at 0.96 μm and 79 nm at 1.06 μm.