Stackable All-Oxide-Based Nonvolatile Memory With Al₂O₃ Antifuse and p-CuOₓ/ n-InZnOₓ Diode

We developed all-oxide-based nonvolatile memory for low-cost, high-density, and high-performance one-time field-programmable (OTP) memories compared with Si-based antifuse memory using antifuse technologies over a glass substrate. The oxide OTP memory employed the p-CuO/InZnOxdiode as the switching element of the memory cell and Al2O3for the antifuse as the storage node of the memory cell. The memory cell is programmed from the breakdown of Al2O3by applying a program voltage bias that is about 4.5 V. The OTP memory cells show large on/off ratio of about 106and small current distributions at programmed and unprogrammed states resulting from the perfect uniformity of Al2O3thin film before and after breakdown. It also showed a fast programming speed of about 20 ns.