We propose a new photoresist (MSNR: methacrylated silicone-based negative resist) for high resolution bilayer resist systems. This photoresist shows high sensitivity to near-UV light (350–450 nm), D0.5n =40 mJ/cm2, and excellent resistance to reactive ion etching with oxygen. A submicron (0.5 μm) pattern with a high aspect ratio can be easily fabricated with MSNR/AZ bilayer resist systems using near-UV lithography.
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Morita et al. (1986) studied this question.
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