We propose a new photoresist MSNR (Methacrylated Silicone-based Negative Resist) for high resolution two-layer resist systems. This photoresist shows high sensitivity to near-UV light (350–450 nm), D 0.5 =40 mJ/cm 2 , and excellent resistance to reactive ion etching under oxygen gas. A submicron (0.7 µm) patterns with a high aspect ratio can be easily fabricated with MSNR/AZ two-layer resist systems using near-UV lithography.
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Tanaka et al. (1985) studied this question.
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