Thermoelectric Properties and Transport Mechanism of Pure and Bi‐Doped SiNWs‐Mg₂Si

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Through the use of nano‐Si wires as additive, a significant improvement in the thermoelectric (TE) properties of Mg 2 Si is achieved. SiNWs‐Mg 2 Si materials are prepared by a wet etching method followed by field activated pressure assisted synthesis (FAPAS). The results show that the presence of SiNWs successfully decouples the relationship between the electrical resistivity and the Seebeck coefficient of Mg 2 Si. The effect of doping with Bi is also investigated. The results show that the addition of Bi changed the scattering mechanism, and a zT value of 0.47 is determined at 800 K for Mg 2 Si 0.99 Bi 0.01 ‐0.005SiNWs. The presence of MgO as an impurity and its effect on zT are discussed.